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Large area electron beam annealing

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dc.contributor.authorRussell, P. E., author
dc.contributor.authorCollins, G. J., author
dc.contributor.authorJohnson, T., author
dc.contributor.authorRocca, Jorge J., author
dc.contributor.authorMoore, Cameron A., author
dc.contributor.authorAmerican Institute of Physics, publisher
dc.date.accessioned2007-01-03T08:09:53Z
dc.date.available2007-01-03T08:09:53Z
dc.date.issued1983
dc.description.abstractWe have achieved wide area (38 cm2) electron beam annealing of ion implanted silicon wafers using a glow discharge electron beam with electron energies between 3 and 7 keV. A continuous beam 7 cm in diameter with a power density up to 90 W/cm2 was used to anneal the 7-cm-diam central portion of boron-implanted (30 keV, 5 × 1015 atoms/cm2) n-type (100) silicon wafers 10 cm in diameter. Annealing was obtained without redistribution of the original dopant profile using a 15-s electron beam exposure. Due to the high electron beam power density achieved over a large area, one can uniformly anneal an entire wafer in a single exposure without sample or beam scanning.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationMoore, Cameron A., et al., Large Area Electron Beam Annealing, Applied Physics Letters 43, no. 3 (August 1, 1983): 290-292.
dc.identifier.urihttp://hdl.handle.net/10217/67456
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartofFaculty Publications
dc.rights©1983 American Institute of Physics.
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.titleLarge area electron beam annealing
dc.typeText

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