ReSi2 thin-film infrared detectors
| dc.contributor.author | Mahan, John E., author | |
| dc.contributor.author | Becker, James P., author | |
| dc.contributor.author | Long, Robert G., author | |
| dc.contributor.author | American Vacuum Society, publisher | |
| dc.date.accessioned | 2007-01-03T08:10:30Z | |
| dc.date.available | 2007-01-03T08:10:30Z | |
| dc.date.issued | 1995 | |
| dc.description.abstract | Two types of thin-film infrared-sensing devices have been investigated using the narrow band-gap semiconductor, rhenium disilicide (Eg~0.1 eV). These are the ReSi2/n-Si heterojunction internal photoemission (HIP) detector and the ReSi2 thin-film photoconductor. The HIP device was found to be rectifying and to obey a Fowler-type law with a long-wavelength cutoff of ~2.1 μm (0.59 eV) at room temperature. In hopes of approaching the fundamental limit for a ReSi2-based photonic detector, ~12 μm (0.1 eV), the ReSi2 photoconductor was explored. Indeed, the spectral response (measured at 10 K) of the ohmic photoconductor was found to extend to 6 μm (the present limit of our measurement equipment), with no indication of a detection cutoff. | |
| dc.format.medium | born digital | |
| dc.format.medium | articles | |
| dc.identifier.bibliographicCitation | Becker, James P., John E. Mahan, and Robert G. Long, ReSi2 Thin-Film Infrared Detectors, Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films 13, no. 3 (May/June 1995): 1133-1135. | |
| dc.identifier.uri | http://hdl.handle.net/10217/67935 | |
| dc.language | English | |
| dc.language.iso | eng | |
| dc.publisher | Colorado State University. Libraries | |
| dc.relation.ispartof | Faculty Publications | |
| dc.rights | ©1995 American Vacuum Society. | |
| dc.rights | Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright. | |
| dc.title | ReSi2 thin-film infrared detectors | |
| dc.type | Text |
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