Repository logo
 

Organometallic vapor-phase homoepitaxy of gallium arsenide assisted by a downstream hydrogen afterglow plasma in the growth region

Simple item page
dc.contributor.authorPihlstrom, B. G., author
dc.contributor.authorThompson, L. R., author
dc.contributor.authorSheng, T. Y., author
dc.contributor.authorCollins, George J., author
dc.contributor.authorAmerican Institute of Physics, publisher
dc.date.accessioned2007-01-03T08:09:42Z
dc.date.available2007-01-03T08:09:42Z
dc.date.issued1992
dc.description.abstractIn situ generated arsenic hydrides are reacted downstream with trimethylgallium (TMGa), both in the presence of and in the absence of a downstream hydrogen afterglow plasma. The homoepitaxial activation energy dramatically changes from 62 kcal/mol for the pure thermal to 21 kcal/mol for the plasma-assisted growth. The carbon incorporation mechanism for the plasma-assisted growth at temperatures less than 400 °C has a distinct activation energy for carbon incorporation of 23 kcal/mol, independent of V-III ratios. At temperatures above 400 °C, the level of carbon incorporated in the films reaches a level that appears to be dependent on the gas-phase precursor V-III ratio. The activation energy of the low-temperature region is consistent with the surface decomposition of arsenic hydrides.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationPihlstrom, B. G., et al., Organometallic Vapor-Phase Homoepitaxy of Gallium Arsenide Assisted by a Downstream Hydrogen Afterglow Plasma in the Growth Region, Applied Physics Letters 60, no. 25 (June 22, 1992): 3144-3146.
dc.identifier.urihttp://hdl.handle.net/10217/67409
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartofFaculty Publications
dc.rights©1992 American Institute of Physics.
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.titleOrganometallic vapor-phase homoepitaxy of gallium arsenide assisted by a downstream hydrogen afterglow plasma in the growth region
dc.typeText

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
ECEgjc00001.pdf
Size:
206.3 KB
Format:
Adobe Portable Document Format
Description:
Download

Collections

Faculty Publications