Electron beam assisted chemical vapor deposition of SiO2
| dc.contributor.author | Collins, G. J., author | |
| dc.contributor.author | Boyer, P. K., author | |
| dc.contributor.author | Emery, K., author | |
| dc.contributor.author | Rocca, Jorge J., author | |
| dc.contributor.author | Thompson, L. R., author | |
| dc.contributor.author | American Institute of Physics, publisher | |
| dc.date.accessioned | 2007-01-03T08:09:53Z | |
| dc.date.available | 2007-01-03T08:09:53Z | |
| dc.date.issued | 1983 | |
| dc.description.abstract | We have demonstrated electron beam assisted chemical vapor deposition of silicon dioxide films on silicon substrates via electron impact dissociation of SiH4, and N2O gas. Dissociation of reactant gases occurs primarily in the confined planar region of the electron beam created plasma. Electron beam deposited SiO2 films have been categorized in terms of their electrical, physical, and chemical properties. | |
| dc.format.medium | born digital | |
| dc.format.medium | articles | |
| dc.identifier.bibliographicCitation | Thompson, L. R., et al., Electron Beam Assisted Chemical Vapor Deposition of SiO2, Applied Physics Letters 43, no. 8 (October 15, 1983): 777-779. | |
| dc.identifier.uri | http://hdl.handle.net/10217/67455 | |
| dc.language | English | |
| dc.language.iso | eng | |
| dc.publisher | Colorado State University. Libraries | |
| dc.relation.ispartof | Faculty Publications | |
| dc.rights | ©1983 American Institute of Physics. | |
| dc.rights | Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright. | |
| dc.title | Electron beam assisted chemical vapor deposition of SiO2 | |
| dc.type | Text |
Files
Original bundle
1 - 1 of 1
Loading...
- Name:
- ECEjjr00018.pdf
- Size:
- 271.38 KB
- Format:
- Adobe Portable Document Format
- Description: