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High single-mode power conversion efficiency vertical-cavity top-surface-emitting lasers

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dc.contributor.authorChalmers, S. A., author
dc.contributor.authorLear, Kevin L., author
dc.contributor.authorIEEE, publisher
dc.date.accessioned2007-01-03T04:43:04Z
dc.date.available2007-01-03T04:43:04Z
dc.date.issued1993
dc.description.abstractWe report advances in the power conversion (wall-plug) efficiency of vertical-cavity top-surface-emitting lasers. The devices were fabricated from molecular beam epitaxial layers using deep proton implants to define gain-guided lasers. The epitaxial structure included low resistance, piecewise linearly graded n-type and p-type mirrors, a triple In0.2Ga0.8As quantum-well active region, and a delta-doped contact layer. Power conversion efficiencies as high as 12.7% for continuous-wave single-mode operation were measured after several hours of device operation.
dc.description.sponsorshipThis work was supported by the U.S. Department of Energy under Contract DE-AC04-76DP00789.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationLear, K. L. and S. A. Chalmers, High Single-Mode Power Conversion Efficiency Vertical-Cavity Top-Surface-Emitting Lasers, IEEE Photonics Technology Letters 5, no. 9 (September 1993): 972-975.
dc.identifier.urihttp://hdl.handle.net/10217/832
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartofFaculty Publications
dc.rights©1993 IEEE.
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.subjectlaser cavity resonators
dc.subjectindium compounds
dc.subjectgallium arsenide
dc.subjectIII-V semiconductors
dc.subjectlaser modes
dc.subjectsemiconductor lasers
dc.titleHigh single-mode power conversion efficiency vertical-cavity top-surface-emitting lasers
dc.typeText

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