Silicon nitride films deposited with an electron beam created plasma
| dc.contributor.author | Collins, G. J., author | |
| dc.contributor.author | Zarnani, H., author | |
| dc.contributor.author | Thompson, L. R., author | |
| dc.contributor.author | Rocca, Jorge J., author | |
| dc.contributor.author | Emery, K. A., author | |
| dc.contributor.author | Bishop, D. C., author | |
| dc.contributor.author | American Institute of Physics, publisher | |
| dc.date.accessioned | 2007-01-03T08:09:53Z | |
| dc.date.available | 2007-01-03T08:09:53Z | |
| dc.date.issued | 1984 | |
| dc.description.abstract | Silicon nitride films have been deposited using an electron beam created plasma in a silane, ammonia, and nitrogen mixture. The films were deposited at substrate temperatures between 50 and 400 °C. Physical, chemical, and electrical properties of these films are reported. | |
| dc.format.medium | born digital | |
| dc.format.medium | articles | |
| dc.identifier.bibliographicCitation | Bishop, D. C., et al., Silicon Nitride Films Deposited with an Electron Beam Created Plasma, Applied Physics Letters 44, no. 6 (March 15, 1984): 598-600. | |
| dc.identifier.uri | http://hdl.handle.net/10217/67451 | |
| dc.language | English | |
| dc.language.iso | eng | |
| dc.publisher | Colorado State University. Libraries | |
| dc.relation.ispartof | Faculty Publications | |
| dc.rights | ©1984 American Institute of Physics. | |
| dc.rights | Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright. | |
| dc.title | Silicon nitride films deposited with an electron beam created plasma | |
| dc.type | Text |
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