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Improved AlGaInP-based red (670–690 nm) surface-emitting lasers with novel C-doped short-cavity epitaxial design

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dc.contributor.authorFigiel, J. J., author
dc.contributor.authorKilcoyne, Sean Patrick, author
dc.contributor.authorLear, Kevin L., author
dc.contributor.authorChoquette, Kent D., author
dc.contributor.authorCrawford, Mary Hagerott, author
dc.contributor.authorSchneider, Richard P., author
dc.contributor.authorAmerican Institute of Physics, publisher
dc.date.accessioned2007-01-03T04:41:14Z
dc.date.available2007-01-03T04:41:14Z
dc.date.issued1995
dc.description.abstractA modified epitaxial design leads to straightforward implementation of short (1λ) optical cavities and the use of C as the sole p-type dopant in AlGaInP/AlGaAs red vertical-cavity surface-emitting lasers (VCSELs). Red VCSELs fabricated into simple etched air posts operate continuous wave at room temperature at wavelengths between 670 and 690 nm, with a peak output power as high as 2.4 mW at 690 nm, threshold voltage of 2.2 V, and peak wallplug efficiency of 9%. These values are all significant improvements over previous results achieved in the same geometry with an extended optical cavity epitaxial design. The improved performance is due primarily to reduced optical losses and improved current constriction and dopant stability.
dc.description.sponsorshipThis work was supported by the U.S. Department of Energy under Contract No. DE-AC04-94AL85000.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationSchneider, R. P., et al., Improved AlGaInP-Based Red (670-690 nm) Surface-Emitting Lasers with Novel C-Doped Short-Cavity Epitaxial Design, Applied Physics Letters 67, no. 3 (17 July 1995): 329-331.
dc.identifier.urihttp://hdl.handle.net/10217/813
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartofFaculty Publications
dc.rights©1995 American Institute of Physics.
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.subjectgallium phosphides
dc.subjectaluminium phosphides, indium phosphides
dc.subjectsemiconductor lasers
dc.subjectlaser cavities
dc.subjectsuperlattices
dc.subjectcrystal doping
dc.subjectcarbon additions
dc.subjectepitaxy
dc.subjectfabrication
dc.subjectdesign
dc.subjectthreshold current
dc.subjectefficiency
dc.titleImproved AlGaInP-based red (670–690 nm) surface-emitting lasers with novel C-doped short-cavity epitaxial design
dc.typeText

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