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Resonant-tunneling diodes with emitter prewells

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dc.contributor.authorLear, Kevin L., author
dc.contributor.authorKlimeck, Gerhard, author
dc.contributor.authorBowen, R. Chris, author
dc.contributor.authorBoykin, Timothy B., author
dc.contributor.authorAmerican Institute of Physics, publisher
dc.date.accessioned2007-01-03T04:41:14Z
dc.date.available2007-01-03T04:41:14Z
dc.date.issued1999
dc.description.abstractResonant-tunneling diodes (RTDs) incorporating an emitter prewell structure are studied both theoretically and experimentally in order to investigate the utility of the emitter region as a device design parameter. The experiments show a tendency for peak bias, current, and the peak-to-valley ratio to increase for wider prewells, behavior likewise seen in both very simple and detailed calculations. Both the simple and more complete models point to interactions between states associated with the prewell and the main quantum well as the reasons for the increase in peak current. These results suggest design guidelines to affect peak bias, current, or the peak-to-valley ratio of RTDs.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationBoykin, Timothy B., et al., Resonant-Tunneling Diodes with Emitter Prewells, Applied Physics Letters 75, no. 9 (30 August 1999): 1302-1304.
dc.identifier.urihttp://hdl.handle.net/10217/817
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartofFaculty Publications
dc.rights©1999 American Institute of Physics.
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.subjectquantum wells
dc.subjectresonant tunneling diodes
dc.subjectbarriers
dc.subjectemitter notch states
dc.titleResonant-tunneling diodes with emitter prewells
dc.typeText

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