Modal analysis of a small surface emitting laser with a selectively oxidized waveguide
Date
1995
Authors
Schneider, Richard P., author
Choquette, Kent D., author
Lear, Kevin L., author
Kilcoyne, Sean Patrick, author
American Institute of Physics, publisher
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Abstract
We describe studies of an index-guided ~4×3 µm2 vertical cavity surface emitting laser with a cw, room temperature 133 µA threshold current and 53% slope efficiency fabricated using selective wet thermal oxidation to provide optical and electrical confinement. While the device operates strictly single mode, a large number of transverse modes are evident in the subthreshold luminescence observed in both vertical and lateral directions. Despite the lumped nature of the index region, the transverse mode wavelengths agree very well with those predicted for a conventional distributed waveguide structure. Waveguide dimensions and an effective index step of 2% between the active and cladding region are determined by fitting the modal data.
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Subject
semiconductor lasers
gallium arsenides
aluminium arsenides
heterojunctions
laser cavities
indium arsenides
oxidation
confinement
efficiency
threshold current