Electron beam assisted CVD of silicon dioxide and silicon nitride films
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A glow discharge electron beam has been used to deposit silicon dioxide (SiO2) and silicon nitride(Si3N4) films for microelectronic applications. Electron beam assisted CVD is a new technique in which the reaction volume is defined mainly by the geometry of the electron beam and offers the possibility of uniform deposition over large areas. The SiO2films were deposited in silane-nitrous oxide-nitrogen mixtures, and the Si3N4 films were deposited in silane ammonia-nitrogen mixtures. The films were deposited with a 2-4 kV electron beam parallel to the sample, at 0.1-1 Torr pressures, and at substrate ...