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High single-mode power conversion efficiency vertical-cavity top-surface-emitting lasers

Date

1993

Authors

Chalmers, S. A., author
Lear, Kevin L., author
IEEE, publisher

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Abstract

We report advances in the power conversion (wall-plug) efficiency of vertical-cavity top-surface-emitting lasers. The devices were fabricated from molecular beam epitaxial layers using deep proton implants to define gain-guided lasers. The epitaxial structure included low resistance, piecewise linearly graded n-type and p-type mirrors, a triple In0.2Ga0.8As quantum-well active region, and a delta-doped contact layer. Power conversion efficiencies as high as 12.7% for continuous-wave single-mode operation were measured after several hours of device operation.

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Subject

laser cavity resonators
indium compounds
gallium arsenide
III-V semiconductors
laser modes
semiconductor lasers

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