Spontaneous emission factor in oxide confined vertical-cavity lasers
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We report on measurements of the spontaneous emission factor for oxide-confined InGaAs vertical cavity surface emitting lasers. The spontaneous emission factor is determined as a function of the active layer volume from the measurement of small-signal harmonic distortion at threshold. For a 3×3 µm oxide aperture device we obtain spontaneous emission factor of 4.2• 10–2 at room temperature.