Improved AlGaInP-based red (670–690 nm) surface-emitting lasers with novel C-doped short-cavity epitaxial design

Figiel, J. J., author; Kilcoyne, Sean Patrick, author; Lear, Kevin L., author; Choquette, Kent D., author; Crawford, Mary Hagerott, author; Schneider, Richard P., author; American Institute of Physics, publisher

Improved AlGaInP-based red (670–690 nm) surface-emitting lasers with novel C-doped short-cavity epitaxial design

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ECEkll00003.pdf (64.32 KB)

Date

1995

Authors

Figiel, J. J., author

Kilcoyne, Sean Patrick, author

Lear, Kevin L., author

Choquette, Kent D., author

Crawford, Mary Hagerott, author

Schneider, Richard P., author

American Institute of Physics, publisher

Abstract

A modified epitaxial design leads to straightforward implementation of short (1λ) optical cavities and the use of C as the sole p-type dopant in AlGaInP/AlGaAs red vertical-cavity surface-emitting lasers (VCSELs). Red VCSELs fabricated into simple etched air posts operate continuous wave at room temperature at wavelengths between 670 and 690 nm, with a peak output power as high as 2.4 mW at 690 nm, threshold voltage of 2.2 V, and peak wallplug efficiency of 9%. These values are all significant improvements over previous results achieved in the same geometry with an extended optical cavity epitaxial design. The improved performance is due primarily to reduced optical losses and improved current constriction and dopant stability.

Subject

gallium phosphides

aluminium phosphides, indium phosphides

semiconductor lasers

laser cavities

superlattices

crystal doping

carbon additions

epitaxy

fabrication

design

URI

http://hdl.handle.net/10217/813

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Improved AlGaInP-based red (670–690 nm) surface-emitting lasers with novel C-doped short-cavity epitaxial design

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