Reflection high-energy electron diffraction patterns of carbide-contaminated silicon surfaces
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Carbon contamination of silicon surfaces is a longstanding concern for growers of thin films who utilize silicon wafer substrates. This contamination often takes the form of epitaxial β-SiC particles which grow after the decomposition of adsorbed carbon-bearing molecules, and the subsequent reaction of the freed carbon with the silicon substrate. Positive identification of such SiC contamination is possible via reflection high-energy electron diffraction (RHEED). To provide a complete demonstration and analysis of the relevant RHEED patterns, we prepared within a "silicon molecular beam epitaxy" ...