Repository logo
 

Epitaxial films of semiconducting FeSi2 on (001) silicon

Date

1990

Authors

Nathan, Menachem, author
Nicolet, Marc-A., author
Bai, Gang, author
Xinghua, Yan, author
Long, Robert G., author
Robinson, G. Y., author
Geib, Kent M., author
Mahan, John E., author
American Institute of Physics, publisher

Journal Title

Journal ISSN

Volume Title

Abstract

Epitaxial thin films of the semiconducting transition metal silicide, beta-FeSi2, were grown on (001) silicon wafers. The observed matching face relationship is FeSi2 (100)/Si(001), with the azimuthal orientation being FeSi2 [010]
Si〈110〉. This heteroepitaxial relationship has acommon unit mesh of 59 Å2 area, with a mismatch of 2.1%. There is a strong tendency toward island formation within this heteroepitaxial system.

Description

Rights Access

Subject

Citation

Associated Publications