Large area electron beam annealing
Date
1983
Authors
Russell, P. E., author
Collins, G. J., author
Johnson, T., author
Rocca, Jorge J., author
Moore, Cameron A., author
American Institute of Physics, publisher
Journal Title
Journal ISSN
Volume Title
Abstract
We have achieved wide area (38 cm2) electron beam annealing of ion implanted silicon wafers using a glow discharge electron beam with electron energies between 3 and 7 keV. A continuous beam 7 cm in diameter with a power density up to 90 W/cm2 was used to anneal the 7-cm-diam central portion of boron-implanted (30 keV, 5 × 1015 atoms/cm2) n-type (100) silicon wafers 10 cm in diameter. Annealing was obtained without redistribution of the original dopant profile using a 15-s electron beam exposure. Due to the high electron beam power density achieved over a large area, one can uniformly anneal an entire wafer in a single exposure without sample or beam scanning.