Silicon nitride films deposited with an electron beam created plasma
Date
1984
Authors
Collins, G. J., author
Zarnani, H., author
Thompson, L. R., author
Rocca, Jorge J., author
Emery, K. A., author
Bishop, D. C., author
American Institute of Physics, publisher
Journal Title
Journal ISSN
Volume Title
Abstract
Silicon nitride films have been deposited using an electron beam created plasma in a silane, ammonia, and nitrogen mixture. The films were deposited at substrate temperatures between 50 and 400 °C. Physical, chemical, and electrical properties of these films are reported.