Titanium disilicide formation by wide-area electron beam irradiation
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We describe the use of a wide-area (38 cm2) electron beam as a heat source to interdiffuse 400-Å-thick sputter-deposited titanium films into 3-6-Ω cm(100) n-type silicon wafers. Isochronal exposures of 30 s with electron beam of current densities greater than 250 mA/cm2 reduced the as-deposited sheet resistance by a factor of 10, while exposures at half this current caused the sheet resistance to increase by a factor of 2.5. Compositional depth profiles obtained from a combination of ion beam sputtering and Auger electron spectroscopy show that this resistivity increase is caused by diffusion ...